Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel

Igbt, Module, Dual N Channel, 600V, 300A; Continuous Collector Current: 300A; Collector Emitter Saturation Voltage: 2.45V; Power Dissipation: 1Kw; Operating Temperature Max:150°C; IGBT Termination:Stud; Transistor Mounting:Panel Rohs Compliant: Yes |Fuji Electric 2MBI300U2B-060-50

IGBT, DUAL, MODULE, 300A, 600V, NPT; Transistor Polarity: N Channel; DC Collector Current: 300A; Collector Emitter Saturation Voltage Vce(on): 2.45V; Power Dissipation Pd: 1kW; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: Module; No. of Pins: 7Pins; Operating Tem perature Max: 150°C; Product Range: -; Current Ic @ Vce Sat: 300A; Current Ic Continuous a Max: 300A; Current Temperature: 25°C; External Depth: 45mm; External Length / Height: 30mm; External Width: 92mm; Fall Time tf: 480ns; Full Power Rating Temperature: 25°C; Isolation Voltage: 2.5kV; Junction Temperature Tj Max: 150°C; Module Configuration: Dual; No. of Transistors: 2; Power Dissipation Max: 1kW; Pulsed Current Icm: 600A; Rise Time: 400ns; Termination Type: Screw; Voltage Vces: 600V