Fuji 2MBI300N-060 Insulated Gate Bipolar Transistor
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| Description | IGBT MODULE |
|---|---|
| Feature | IGBT MODULE ( N series ) n Outline Drawing n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current) n Applications • High Power Switching • A. C. Motor Controls • D. C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit • Absolute Maximum Ratings ( Tc=25°C) Items Symbols Ratings Units Collector-Emitter Voltage Gate -Emitter Voltage VCES VGES 600 V ± 20 V Collector Current Max. Power. |
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